Bisaminoalkoxysilane compounds and methods for using same to deposit silicon-containing films

A method for forming a silicon-containing film on at least one surface of a substrate comprising:

• providing the substrate in a reactor;
• and
• forming the silicon-containing film on the at least one surface by a deposition process using at least one precursor comprising a bisaminoalkoxysilane having Formula I:
• R1Si(NR2R3)(NR4R5)OR6 I
• where R1 is selected from a hydrogen atom, a C1 to C10 linear alkyl group, a C3 to C10 branched alkyl group, a C3 to C10 cyclic alkyl group, a C3 to C10 alkenyl group, a C3 to C10 alkynyl group, a C4 to C10 aromatic hydrocarbon group;
• R2, R3, R4, and R5 are each independently selected from a hydrogen atom, a C4 to C10 branched alkyl group, a C3 to C10 cyclic alkyl group, a C3 to C10 alkenyl group, a C3 to C10 alkynyl group, and a C4 to C10 aromatic hydrocarbon group;
• R6 is selected from a C1 to C10 linear alkyl group, a C3 to C10 branched alkyl group, a C3 to C10 cyclic alkyl group, a C3 to C10 alkenyl group, a C2 to C10 alkynyl group, and a C4 to C10 aromatic hydrocarbon group;
• and optionally wherein R2 and R3, R4 and R5, or both in Formula I can be linked together to form a ring;
• and optionally wherein R2 and R4 in Formula I can be linked together to form a diamino group.

A method for depositing a silicon-containing film on at least a portion of a substrate having a surface feature in a flowable chemical vapor deposition process, the method comprising the steps of:

• placing a substrate having a surface feature into a reactor wherein the reactor is maintained at one or more temperatures ranging from −20° C. to about 400° C.;
• introducing into the reactor at least one precursor comprising a bisaminoalkoxysilane compound having a Formula I:
• R1Si(NR2R3)(NR4R5)OR6 I
• where R1 is selected from a hydrogen atom, a C1 to C10 linear alkyl group, a C3 to C10 branched alkyl group, a C3 to C10 cyclic alkyl group, a C3 to C10 alkenyl group, a C3 to C10 alkynyl group, a C4 to C10 aromatic hydrocarbon group;
• R2, R3, R4, and R5 are each independently selected from a hydrogen atom, a C4 to C10 branched alkyl group, a C3 to C10 cyclic alkyl group, a C3 to C10 alkenyl group, a C3 to C10 alkynyl group, and a C4 to C10 aromatic hydrocarbon group;
• R6 is selected from a C1 to C10 linear alkyl group, a C3 to C10 branched alkyl group, a C3 to C10 cyclic alkyl group, a C3 to C10 alkenyl group, a C2 to C10 alkynyl group, and a C4 to C10 aromatic hydrocarbon group;
• and optionally wherein R2 and R3, R4 and R5, or both in Formula I can be linked together to form a ring;
• and optionally wherein R2 and R4 in Formula I can be linked together to form a diamino group and a nitrogen source wherein the at least one compound reacts with the nitrogen source to form a nitride containing film on at least a portion of the surface feature;
• introducing a source selected from an oxygen source, a nitrogen-containing source, or both to react with the bisaminoalkoxysilane compound on the substrate to form a flowable film on at least a portion of the surface feature;
• treating the flowable film with an oxygen source at one or more temperatures ranging from about 100° C. to about 1000° C. to form a solid silicon and oxygen containing film on at least a portion of the surface feature.