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US 2016/0236375 A1Published application
Silicon carbide ingot and method for manufacturing silicon carbide substrate
AssigneeSumitomo Electric Industries, Ltd.
InventorsTsutomu HORI, Makoto SASAKI, Tsubasa HONKE, Tomohiro KAWASE
Life of this patent
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Abstract
A silicon carbide ingot includes an end surface and an end surface opposite to the end surface. In the silicon carbide ingot, the end surface and the end surface face each other in a growth direction, and a gradient of a nitrogen concentration in the growth direction is not less than 1×1016 cm−4 and not more than 1×1018 cm−4.
Claims9
A silicon carbide ingot comprising a first end surface and a second end surface opposite to the first end surface,
- the first end surface and the second end surface facing each other in a growth direction, a gradient of a nitrogen concentration in the growth direction being not less than 1×1016 cm−4 and not more than 1×1018 cm−4.
Dependencies are inferred from the claim text.