Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same
AssigneeFUJIFILM Corporation
InventorsHiromi KOBAYASHI, Haruki INABE
Life of this patent
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Abstract
A positive type resist composition for use in liquid immersion exposure comprises: (A) a resin having a monocyclic or polycyclic cycloaliphatic hydrocarbon structure, the resin increasing its solubility in an alkali developer by an action of acid; (B) a compound generating acid upon irradiation with one of an actinic ray and a radiation; (C) an alkali soluble compound having an alkyl group of 5 or more carbon atoms; and (D) a solvent.
Claims41
A resist composition for ArF exposure comprising:
- (A) a resin having a monocyclic or polycyclic cycloaliphatic hydrocarbon structure, the resin increasing its solubility in an alkali developer by an action of acid;
- (B) a compound generating acid upon irradiation with one of an actinic ray and a radiation;
- (C) an alkali soluble compound having an alkyl group of 5 or more carbon atoms;
- and
- (D) a solvent,
- wherein the structure of the resin (A) and the structure of the alkali soluble resin (C) are not the same.
A resist composition for ArF exposure comprising:
- (A) a resin having a monocyclic or polycyclic cycloaliphatic hydrocarbon structure, the resin increasing its solubility in an alkali developer by an action of acid;
- (B) a compound generating acid upon irradiation with one of an actinic ray and a radiation;
- (C) an alkali soluble resin having one or more fluorine atoms;
- and
- (D) a solvent,
- wherein the alkali soluble resin (C) has a group which is solubilized by hydrolyzation with an alkali developer, and
- the structure of the resin (A) and the structure of the alkali soluble resin (C) are not the same.
A resist composition for ArF exposure comprising:
- (A) a resin having a monocyclic or polycyclic cycloaliphatic hydrocarbon structure, the resin increasing its solubility in an alkali developer by an action of acid;
- (B) a compound generating acid upon irradiation with one of an actinic ray and a radiation;
- (C) an alkali soluble resin having an alkali soluble group and one or more fluorine atoms;
- and
- (D) a solvent,
- wherein the resin (A) does not have a fluorine atom, and
- the structure of the resin (A) and the structure of the alkali soluble resin (C) are not the same.
A resist composition for ArF exposure comprising:
- (A) a resin having a monocyclic or polycyclic cycloaliphatic hydrocarbon structure, the resin increasing its solubility in an alkali developer by an action of acid;
- (B) a compound generating acid upon irradiation with one of an actinic ray and a radiation;
- (C) an alkali soluble resin having one or more fluorine atoms;
- and
- (D) a solvent,
- wherein the structure of the resin (A) and the structure of the alkali soluble resin (C) are not the same,
- the amount of the alkali soluble resin (C) is 1 to 10% by mass based on the total solid components in the resist composition, and
- the alkali soluble resin (C) contains an alkyl group having 1 to 10 carbon atoms substituted by at least one fluorine atom.
Dependencies are inferred from the claim text.