Frequency selective limiter
AssigneeRaytheon Company
InventorsMatthew A. Morton, Gerhard Sollner
Life of this patent
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Abstract
The present disclosure is directed towards a frequency selective limiter having a first magnetic material disposed over a first dielectric material and a strip conductor disposed over the magnetic material. In some embodiments, the frequency selective limiter includes a second magnetic material disposed over the strip conductor and a second dielectric material disposed over the second magnetic material. The first and second dielectric material may have a lower relative permittivity than the first and second magnetic material. In an embodiment, the frequency selective limiter includes a slow wave structure disposed to magnetically couple a magnetic field, produced by electromagnetic energy propagating through the slow wave structure, into the magnetic material.
Claims22
-5. (canceled)
A frequency selective limiter comprising;
- a first layer of a dielectric material having first and second opposing surfaces;
- a first layer of magnetic material having first and second opposing surfaces, wherein the second surface of the first layer of the dielectric materials is disposed over the first surface of the first magnetic material, and wherein the dielectric material has a lower relative permittivity than the magnetic material;
- and
- a strip conductor disposed over the first layer of magnetic material.
A frequency selective limiter comprising:
- a magnetic material to magnetically couple a magnetic field, produced by electromagnetic energy propagating through the slow wave structure, into the magnetic material;
- a dielectric layer disposed over the magnetic material, wherein the dielectric layer has a lower relative permittivity than the magnetic material;
- and
- wherein the slow wave structure has an input impedance Z0 and wherein the impedances periodically change from an impedance greater than Z0 to an impedance less than Z0 as the electromagnetic energy propagates through the slow wave structure.
A frequency selective limiter comprising:
- a first and second layer of a dielectric material, each having first and second opposing surfaces;
- a first and second layer of magnetic material;
- each having first and second opposing surfaces;
- wherein the second surface of the first layer of the dielectric materials is disposed over the first surface of the first magnetic material and the first surface of the second layer of the dielectric materials is disposed over the second surface of the second magnetic material, wherein the dielectric material has a lower relative permittivity than the magnetic material;
- a strip conductor disposed between the first and second layer of magnetic material;
- and
- wherein the slow wave structure is a transmission line having an input impedance, Z0 and wherein the transmission line includes a first transmission line section and a pair of second transmission line sections, wherein the first transmission line section has an impedance ZH higher than Z0 and the pair of second transmission line sections have an impedance lower than Z0.
Dependencies are inferred from the claim text.