Method for cutting object to be processed
AssigneeHamamatsu Photonics K.K.
InventorsHideki SHIMOI, Naoki UCHIYAMA, Daisuke KAWAGUCHI
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AssigneeHamamatsu Photonics K.K.
InventorsHideki SHIMOI, Naoki UCHIYAMA, Daisuke KAWAGUCHI
Estimating the term…
A silicon substrate 12 has a main face in a (100) plane, whereby a fracture 17 generated from a molten processed region 13 acting as a start point extends in a cleavage direction of the silicon substrate 12 (a direction orthogonal to the main face of the silicon substrate 12). Here, a rear face 1b of an object to be processed 1A and a front face 10a of an object to be processed for separation 10A are bonded to each other by anode bonding, whereby the fracture 17 reaches a front face 1a of the object 1A continuously without substantially changing its direction. When generating a stress in the object for separation 10A, the fracture 17 has reached a rear face 10b of the object for separation 10A and thus easily extends toward the object 1A.
1-10. (canceled)
An object cutting method comprising the steps of:
Dependencies are inferred from the claim text.