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US 2016/0159974 A1Published application
Photoresist polymers and methods of forming patterns
AssigneeSamsung Electronics Co., Ltd.
InventorsJin PARK, Hyun-Woo KIM
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Abstract
A photoresist polymer is synthesized from a repeating unit that comprises a first leaving group including an ester group, and a second leaving group capable of being removed together with the first leaving group.
Claims24
A photoresist polymer synthesized from a repeating unit, the repeating unit comprising:
- a first leaving group including an ester group;
- and
- a second leaving group capable of being removed with the first leaving group.
(canceled)
A method of forming a pattern, comprising:
- forming a photoresist layer on an object layer, the photoresist layer including a polymer synthesized from a repeating unit having a leaving group containing an ester group;
- performing an exposure process on the photoresist layer to form an exposed portion from which the leaving group containing the ester group is removed, and a non-exposed portion at which the leaving group containing the ester group remains;
- and
- etching the non-exposed portion of the photoresist layer to form a photoresist pattern.
1 more element
(canceled)
21-25. (canceled)
A method of forming a pattern, comprising:
- forming a photoresist layer on an object layer, the photoresist layer including a polymer synthesized from a repeating unit that includes a first leaving group and a second leaving group, the first leaving group including an ester group;
- performing a selective exposure process on the photoresist layer to induce an elimination reaction such that the first leaving group and the second leaving group are separated from the polymer at an exposed portion of the photoresist layer;
- and
- removing a non-exposed portion of the photoresist layer to form a photoresist pattern.
1 more element
28-40. (canceled)
Dependencies are inferred from the claim text.