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US 2016/0141444 A1Published application
METHOD AND APPARATUS FORMING COPPER (Cu) OR ANTIMONY (Sb) DOPED ZINC TELLURIDE AND CADMIUM ZINC TELLURIDE LAYERS IN A PHOTOVOLTAIC DEVICE
AssigneeFirst Solar, Inc.
InventorsLong Chen, Pawel Mrozek
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Abstract
A method and apparatus for an amount of Cu or Sb dopant incorporated into a zinc-based layer as the layer is being formed. The layer is formed over a coated substrate using an electrochemical deposition (ECD) process. In the ECD process, the bias voltage and plating solution composition may be systematically changed during the electrochemical deposition process to change the amount of Cu or Sb dopant incorporated into the plated layer.
Claims20
An electrochemical deposition system comprising:
- a first plating solution comprising a dopant, a complexing agent and a zinc-based semiconductor solute;
- and
- a first electrochemical deposition unit for forming at least a first portion of a doped zinc-based semiconductor layer on a partially completed photovoltaic device placed in the first plating solution, wherein the first electrochemical deposition unit is configured to incorporate the dopant from the first plating solution into the doped zinc-based semiconductor layer during a deposition process.
Dependencies are inferred from the claim text.