Process for manufacturing a semiconductor device comprising an empty trench structure and semiconductor device manufactured thereby
AssigneeSTMicroelectronics S.r.l.
InventorAntonino FIUMARA
Life of this patent
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Abstract
The process is based upon the steps of: forming a trench in a body including a substrate and at least one insulating layer; and depositing a metal layer above the body for closing the open end or mouth of the trench. The trench is formed by selectively etching the body, wherein the reaction by-products deposit on the walls of the trench and form a passivation layer along the walls of the trench and a restriction element in proximity of the mouth of the trench.
Claims22
A process for manufacturing a microelectronic semiconductor device, the process comprising:
- selectively etching a body to form a trench having side walls and an open end, the selectively etching forming reaction by-products;
- causing the reaction by-products to deposit on the side walls of the trench to form a restriction element in proximity of the open end of the trench;
- and
- depositing a metal layer above the body, the metal layer closing the open end of the trench.
A microelectronic semiconductor device comprising:
- a body;
- a trench in the body, the trench having side walls and an open end;
- a restriction element in proximity of the open end of the trench, the restriction element being formed by etching reaction by-products;
- and
- a metal layer above the body, the metal layer closing the open end of the trench without penetrating into the trench.
A vacuum microelectronic device comprising:
- a semiconductor body;
- a trench in the semiconductor body, the trench having side walls and an open end;
- a restriction element at an open end of the trench;
- and
- a metal layer above the semiconductor body, the metal layer closing the open end of the trench without penetrating into the trench.
Dependencies are inferred from the claim text.