Method for increasing detection sensitivity of radon monitor based on electrostatic collection method and device thereof

A method for increasing a detection sensitivity of a radon monitor based on an electrostatic collection method, wherein the detection sensitivity of the radon monitor based on the electrostatic collection method is increased through increasing a collection efficiency of positively charged 218 Po in an internal cell of the radon monitor based on the electrostatic collection method, comprising steps of:

• providing at least two layers of metal meshes between a wall of the internal cell and a semiconductor detector, wherein geometrical sizes of the metal meshes are similar with a geometrical size of the wall of the internal cell;
• and each layer of the metal mesh is isolated from each other;
• connecting a ground wire of a high-voltage module to a surface of the semiconductor detector;
• and
• connecting high-voltage outputting wires of the high-voltage module respectively to the wall of the internal cell and each layer of the metal mesh, in such a manner that high voltages are respectively outputted between the wall of the internal cell and the metal mesh neighboring the wall of the internal cell, between each two neighbor layers of the metal meshes, and between the metal mesh neighboring the surface of the semiconductor detector and the surface of the semiconductor detector;
• and
• adjusting the voltages between the wall of the internal cell and the metal mesh neighboring the wall of the internal cell, between each two neighbor layers of the metal meshes, and between the metal mesh neighboring the surface of the semiconductor detector and the surface of the semiconductor detector to appropriate values, so as to increase a collection efficiency of an electrostatic field to the positively charged 218Po, wherein an electric field intensity close to the wall of the internal cell is increased through directly increasing the voltages between the wall of the internal cell and the metal mesh neighboring the wall of the internal cell, between each two neighbor layers of the metal meshes, and between the metal mesh neighboring the surface of the semiconductor detector and the surface of the semiconductor detector.