Strain compensated reo buffer for iii-n on silicon

Rare earth oxide buffered III-N on silicon wafer comprising:

• a crystalline silicon substrate;
• a rare earth oxide structure deposited on the silicon substrate and including one or more layers of single crystal rare earth oxide;
• a layer of single crystal III-N material deposited on the rare earth oxide structure so as to form an interface between the rare earth oxide structure and the layer of single crystal III-N material, and the layer of single crystal III-N material producing a tensile stress at the interface;
• and
• the rare earth oxide structure having a compressive stress at the interface dependent upon a thickness of the rare earth oxide structure, and the thickness of the rare earth oxide structure providing a compressive stress offsetting at least a portion of the tensile stress at the interface to substantially reduce bowing in the wafer.

Rare earth oxide buffered semiconductor on silicon wafer comprising:

• a crystalline silicon substrate;
• a rare earth oxide structure deposited on the silicon substrate and including one or more layers of single crystal rare earth oxide;
• a layer of single crystal semiconductor material deposited on the rare earth oxide structure so as to form an interface between the rare earth oxide structure and the layer of single crystal semiconductor material, and the layer of single crystal semiconductor material producing a tensile stress at the interface;
• and
• the rare earth oxide structure having a compressive stress at the interface dependent upon a thickness of the rare earth oxide structure, and the thickness of the rare earth oxide structure providing the compressive stress offsetting at least a portion of the tensile stress at the interface to substantially reduce bowing in the wafer.