Euv light source and exposure apparatus

A method for generating EUV light, comprising:

• spraying a plurality of droplets downwardly to an irradiating position through a spray nozzle array having a plurality of spray nozzles;
• performing a scanning using a laser source to sequentially bombard the droplets arriving at the irradiating position to generate EUV light from each of the plurality of droplets;
• and
• collecting and focusing the EUV light at a central focusing point by a the using mirror having at least two first sub-focusing mirrors and at least two second sub-focusing mirrors;
• and a first driving device having at least two first sub-driving devices and at least second sub-driving device.

An exposure apparatus, comprising:

• a base,
• an EUV light source configured as an exposure light source for a photolithography process;
• a wafer stage configured to hold a wafer for forming patterns by the photolithography process;
• a reticle stage for holding a reticle for the photolithography process;
• and
• a control unit configured to control the exposure apparatus to perform the photolithography process,
• wherein the EUV light source comprises a spray nozzle array having a plurality of spray nozzles configured to spray a plurality of rows of droplets to an irradiating position;
• a laser source configured to generate a first laser beam and a second laser beam and cause the first laser beam and the second laser beam to alternately bombard the rows of droplets to generate EUV light with increased output power;
• a focusing mirror having at least two first sub-focusing mirrors and at least two second sub-focusing mirrors;
• and a first driving device having at least two first sub-driving device and at least two second sub-driving device, each of first driving devices driving one of the first sub-focusing mirrors and each of the second sub-driving devices driving one of the second sub-focusing mirrors.