Solid-state imaging device and electronic apparatus
AssigneeSony Corporation
InventorsHideo Kido, Atsuhiko Yamamoto, Akihiro Yamada
Life of this patent
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Abstract
A solid-state imaging device includes a pixel region in which shared pixels which share pixel transistors in a plurality of photoelectric conversion portions are two-dimensionally arranged. The shared pixel transistors are divisionally arranged in a column direction of the shared pixels, the pixel transistors shared between neighboring shared pixels are arranged so as to be horizontally reversed or/and vertically crossed, and connection wirings connected to a floating diffusion portion, a source of a reset transistor and a gate of an amplification transistor in the shared pixels are arranged along the column direction.
Claims20
An imaging device comprising:
- a first shared pixel including:
- a first plurality of photoelectric conversion portions, and
- a first floating diffusion;
- a second shared pixel disposed adjacent to the first shared pixel and including:
- a second plurality of photoelectric conversion portions, and
- a second floating diffusion;
- and
- a transistor portion, the transistor portion including a first reset transistor, a second reset transistor, and an amplification transistor,
- wherein a gate terminal of the amplification transistor is disposed in a first row located between the first shared pixel and the second shared pixel, and
- wherein a gate terminal of the first reset transistor and a gate terminal of the second reset transistor are disposed separated from one another in a second row.
An electronic apparatus comprising:
- an imaging device;
- an optical system configured to guide incident light to the imaging device;
- and
- a signal processing circuit configured to process an output signal of the imaging device,
- wherein the imaging device includes:
- a first shared pixel including:
- a first plurality of photoelectric conversion portions, and
- a first floating diffusion;
- a second shared pixel disposed adjacent to the first shared pixel and including:
- a second plurality of photoelectric conversion portions, and
- a second floating diffusion;
- and
- a transistor portion, the transistor portion including a first reset transistor, a second reset transistor, and an amplification transistor,
- wherein a gate terminal of the amplification transistor is disposed in a first row located between the first shared pixel and the second shared pixel, and
- wherein a gate terminal of the first reset transistor and a gate terminal of the second reset transistor are disposed separated from one another in a second row.
Dependencies are inferred from the claim text.