Image sensor pixel having multiple sensing node gains
AssigneeCommissariat A L'energie Atomique Et Aux Energies Alternatives
InventorsMarie GUILLON, Yvon CAZAUX, Josep SEGURA PUCHADES
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AssigneeCommissariat A L'energie Atomique Et Aux Energies Alternatives
InventorsMarie GUILLON, Yvon CAZAUX, Josep SEGURA PUCHADES
Estimating the term…
The invention concerns an image sensor comprising: at least one pixel having a photodiode (PD); a sensing node (SN) coupled to the photodiode via a transfer gate (104); and a further node (AN) coupled to the sensing node (SN) via a first transistor (112); and a control circuit (120) adapted: to apply, during a reset operation of the voltage levels at the sensing node (SN) and further node (AN), a first voltage level (VDD) to a control node of the first transistor (112); and to apply, during a transfer operation of charge from the photodiode (PD) to the sensing node (SN), a second voltage level (VSK) to the control node of the first transistor (112), the second voltage level being lower than the first voltage level and higher than a ground voltage of the pixel.
An image sensor comprising:
A method of operating at least one pixel of an image sensor, the at least one pixel having:
Dependencies are inferred from the claim text.