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US 2016/0112041 A1Published application
Power transistor model
AssigneeInfineon Technologies Austria AG
InventorsKevni Bueyuektas, Uwe Wahl, Andreas Schloegl, Gerhard Noebauer
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Abstract
A power transistor model is described which comprises a source drain path, a first current source and a voltage controlled second current source in the source drain path which model the static voltage-current-relationship of a modeled power transistor, wherein the voltage-controlled second current source models a nonlinear behavior of a drift zone of the power transistor.
Claims19
A power transistor model comprising:
- a source drain path;
- a first current source and a voltage controlled second current source in the source drain path which model the static voltage-current-relationship of a modeled power transistor;
- wherein the voltage-controlled second current source models a nonlinear behavior of a drift zone of the power transistor.
A power transistor model comprising:
- a gate terminal, a source terminal and a drain terminal and
- a capacitance network comprising one or more nonlinear voltage dependent capacitances, wherein each nonlinear voltage dependent capacitance is connected between the drain terminal and the source terminal or the drain terminal and the gate terminal.
Dependencies are inferred from the claim text.