Power Amplifier Having Separate Interconnects For DC Bias and RF Matching Networks
AssigneeTeledyne Scientific & Imaging, LLC
InventorZachary M. Griffith
Life of this patent
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Abstract
An amplifier cell apparatus has an RF input node, a first power transistor in communication with the input node through a first input impedance matching network, a second power transistor in communication with the input node through a second input impedance matching network, and an RF output node in communication with the first and second power transistors through a single output impedance matching network so that two impedance matching networks are disposed on an RF input side of the amplifier cell.
Claims20
An amplifier cell apparatus, comprising:
- an RF input node;
- a first power transistor in communication with the input node through a first input impedance matching network;
- a second power transistor in communication with the input node through a second input impedance matching network;
- an RF output node in communication with the first and second power transistors through a single output impedance matching network;
- wherein two impedance matching networks are disposed on an RF input side of the amplifier cell.
An amplifier cell apparatus, comprising:
- an RF input node;
- first and second impedance circuits in communication with the RF input node, the first and second impedance circuits in communication with first and second power transistors, respectively;
- and
- an RF ground capacitor disposed between the first and second impedance circuits.
An amplifier cell operation method, comprising:
- splitting a radio-frequency (RF) input signal for presentation to first and second power transistors through first and second impedance matching networks, respectively;
- providing an RF output signal to an RF output node through a single output impedance matching network;
- wherein the first and second impedance matching paths are disposed on an RF input side of the first and second power transistors and the RF output node is on an RF output side of the first and second power transistors.
An amplifier array, comprising:
- a first power amplifier cell having:
- an RF input node;
- and
- first and second power transistors in communication with the RF input node through first and second impedance circuits, respectively;
- and
- a second power amplifier cell having:
- an RF output node in communication with RF input node of the first power amplifier cell, the RF output node also in communication with third and fourth power transistors through a single output impedance matching network;
- wherein the first and second power amplifiers form a two stage array of power amplifiers.
Dependencies are inferred from the claim text.