Methods of post-process dispensation of plasma induced damage protection component

An integrated circuit device, comprising:

• a transistor, comprising:
• a source region on a substrate;
• a gate region on said substrate adjacent said source region;
• and
• a drain region on said substrate adjacent said gate region;
• and
• a protection circuit comprising a diode in series with a circuit break device, wherein said protection circuit is configured in parallel with said transistor, wherein said protection circuit is capable of protecting said transistor from at least a portion of a charge, and wherein said circuit break device is configured to break an electrical path of said protection component for electrically terminating said protection component based upon a current signal.

A system, comprising:

• a semiconductor device processing system to provide an integrated circuit device, wherein said integrated circuit device comprises:
• at least one transistor, wherein said transistor comprises;
• a source region on a substrate;
• a gate region on said substrate adjacent said source region;
• and
• a drain region on said substrate adjacent said gate region;
• and
• a protection circuit comprising a diode in series with a circuit break device, wherein said protection circuit is configured in parallel with said transistor, wherein said protection circuit is capable of protecting said transistor from at least a portion of a charge, and wherein said circuit break device is configured to break an electrical path of said protection component for electrically terminating said protection component based upon a current signal;
• and
• a processing controller operatively coupled to said semiconductor device processing system, said processing controller configured to control an operation of said semiconductor device processing system.