Hybrid laser including anti-resonant waveguides

A hybrid laser apparatus comprising:

• a first semiconductor region including an active region of one or more layers of semiconductor materials from group III, group IV, or group V semiconductor;
• and
• a second semiconductor region coupled with the first semiconductor region, wherein the second semiconductor region includes at least a buried insulating layer and a silicon layer disposed on the buried insulating layer, and further includes:
• an optical waveguide;
• a first trench disposed on a first side of the optical waveguide;
• a second trench disposed on a second side, opposite the first side, of the optical waveguide;
• a third trench disposed on the first side of the optical waveguide such that the first trench is between the third trench and the optical waveguide;
• and
• a fourth trench disposed on the second side of the optical waveguide such that the second trench is between the fourth trench and the optical waveguide,
• wherein the first, second, third and fourth trenches are disposed inside the silicon layer to have a portion of the silicon layer between a respective trench and the buried insulating layer, and wherein the first and second trenches define the optical waveguide.

A method for making a hybrid laser, comprising:

• providing a first semiconductor region including an active region of one or more layers of semiconductor materials from group III, group IV, or group V semiconductor;
• and
• forming a second semiconductor region to be coupled with the first semiconductor region, wherein the second semiconductor region includes at least a buried insulating layer and a silicon layer disposed on the buried insulating layer, wherein forming the second semiconductor region includes:
• disposing a first trench on a first side of an optical waveguide of a second semiconductor region;
• disposing a second trench on a second side, opposite the first side, of the optical waveguide, wherein the first and second trenches define the optical waveguide;
• disposing a third trench on the first side of the optical waveguide such that the first trench is between the third trench and the optical waveguide;
• and
• disposing a fourth trench on the second side of the optical waveguide such that the second trench is placed between the fourth trench and the optical waveguide,
• wherein disposing the first, second, third and fourth trenches includes placing the first, second, third and fourth trenches inside the silicon layer to have a portion of the silicon layer between a respective trench and the buried insulating layer.