Semiconductor-laser-device assembly
AssigneeSony Corporation
InventorsShunsuke KONO, Masaru KURAMOTO, Rintaro KODA
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Abstract
A semiconductor-laser-device assembly includes a mode-locked semiconductor-laser-element assembly including a mode-locked semiconductor laser element, and a dispersion compensation optical system, on which laser light emitted from the mode-locked semiconductor laser element is incident and from which the laser light is emitted; and a semiconductor optical amplifier having a layered structure body including a group III-V nitride-based semiconductor layer, the semiconductor optical amplifier configured to amplify the laser light emitted from the mode-locked semiconductor-laser-element assembly.
Claims20
A semiconductor-laser-device assembly comprising:
- a semiconductor laser element,
- a dispersion compensation optical system configured to receive laser light emitted from the semiconductor laser element, and
- a semiconductor optical amplifier having a layered structure body including a group III-V nitride-based semiconductor layer,
- wherein the semiconductor optical amplifier is configured to receive a portion of the laser light incident on the dispersion compensation optical system and to amplify the laser light,
- wherein the dispersion compensation optical system includes a diffraction grating.
A semiconductor-laser-device assembly comprising:
- a semiconductor laser element,
- a dispersion compensation optical system configured to receive laser light emitted from the semiconductor laser element, and
- a semiconductor optical amplifier having a layered structure body including a group III-V nitride-based semiconductor layer,
- wherein the semiconductor optical amplifier is configured to receive a portion of the laser light incident on the dispersion compensation optical system and to amplify the laser light,
- wherein the dispersion compensation optical system includes a prism.
A semiconductor-laser-device assembly comprising:
- a semiconductor laser element,
- a dispersion compensation optical system configured to receive laser light emitted from the semiconductor laser element, and
- a semiconductor optical amplifier having a layered structure body including a group III-V nitride-based semiconductor layer,
- wherein the semiconductor optical amplifier is configured to receive a portion of the laser light incident on the dispersion compensation optical system and to amplify the laser light,
- wherein the dispersion compensation optical system includes a Gires-Tournois interferometer.
Dependencies are inferred from the claim text.