Topological insulator formed new surface electronic state and the preparation method thereof
OwnerHan-Woong YEOM, Sung-Hwan KIMinventors
Life of this patent
Estimating the term…
Abstract
The disclosure describes a topological insulator having a new surface electronic state and a preparation method thereof, and more particularly, to a topological insulator having a new surface electronic state, the topological insulator including a unimolecular metal layer formed on a 3D topological insulator, and a method of preparing a topological insulator having a new surface electronic state, the method including: heating and cooling at least one selected from the group consisting of tellurium (Te) and selenium (Se), and bismuth (Bi) to prepare an alloy; and forming a unimolecular metal layer on the alloy.
Claims10
A topological insulator having a new surface electronic state, the topological insulator comprising a unimolecular metal layer formed on a 3D topological insulator.
A method of preparing a topological insulator having a new surface electronic state, the method comprising:
- heating and cooling at least one selected from the group consisting of tellurium (Te) and selenium (Se), and bismuth (Bi) to prepare an alloy;
- and
- forming a unimolecular metal layer on the alloy.
A method of preparing a topological insulator having a new surface electronic state, the method comprising:
- heating and cooling at least one selected from the group consisting of tellurium (Te) and selenium (Se), and bismuth (Bi) to prepare a single crystal alloy;
- cleaving a surface of the prepared single crystal alloy in an ultrahigh vacuum state;
- and
- forming a unimolecular metal layer on the cleaved surface of the single crystal alloy.
Dependencies are inferred from the claim text.