Hybrid non-volatile memory device and method for manufacturing such a device

A method for manufacturing a hybrid non-volatile memory device comprising:

• forming a first group of electrically conductive pads spaced apart from each other in a first area of a substrate;
• depositing a first electrically conductive layer on a second area of the substrate;
• etching the first conductive layer, so as to obtain a second group of electrically conductive pads spaced apart from each other in the second area, the etching conditions being chosen such that the conductive pads of the second area have a section at their base smaller than at their top;
• protecting an upper face of the conductive pads of the second area;
• subjecting the substrate to an oxidation treatment, resulting in a layer made of insulating material covering an upper face of the conductive pads of the first area and sides of the conductive pads of the second area;
• depositing an oxide layer at the tops of the conductive pads of the first area, resulting in memory elements of a first type supported by the conductive pads of the first area;
• and
• forming by physical vapor deposition memory elements of a second type at the tops of the conductive pads of the second area, such that each memory element of the second type is supported by one of the conductive pads of the second area.