Memory device and manufacturing method therefor
AssigneeKabushiki Kaisha Toshiba
InventorsYusuke KOBAYASHI, Kikuko SUGIMAE
Life of this patent
Estimating the term…
Abstract
According to one embodiment, a memory device includes a substrate, a conductive wire provided above the substrate to extend in a first direction and including an end portion decreases in width toward a distal end, and a contact connected to the conductive wire at least a side surface of the end portion. The end portion includes, in the contact, a first portion having a shortest distance from an outer peripheral surface of the contact and a second portion extending from the first portion and having a distance from the outer peripheral surface of the contact longer than the shortest distance.
Claims20
A memory device comprising:
- a substrate;
- a conductive wire provided above the substrate to extend in a first direction and including an end portion decreases in width toward a distal end;
- and
- a contact connected to the conductive wire at least a side surface of the end portion,
- the end portion including, in the contact, a first portion having a shortest distance from an outer peripheral surface of the contact and a second portion extending from the first portion and having a distance from the outer peripheral surface of the contact longer than the shortest distance.
A memory device comprising:
- a substrate;
- a plurality of first conductive wires provided on the substrate and extending in a first direction;
- a plurality of second conductive wires provided on the first conductive wires and extending in a second direction crossing the first direction;
- a memory cell connected between a singularity of the first conductive wire and a singularity of the second conductive wire;
- a first contact connected to at least a part of an upper surface of an end portion of the first conductive wire and at least a part of a side surface of the end portion;
- and
- a second contact connected to an upper surface of an end portion of the second conductive wire and at least a part of a side surface of the end portion of the second conductive wire,
- the end portion of the first conductive wire including a first portion having substantially same width in the second direction and a second portion extending from the first portion and having width in the second direction decreasing toward a distal end of the end portion of the first conductive wire, and
- the end portion of the second conductive wire including a third portion having substantially same width in the first direction and a fourth portion extending from the third portion and having width in the first direction decreasing toward a distal end of the end portion of the second conductive wire.
A manufacturing method for a memory device, comprising:
- forming a first insulating film above a substrate;
- forming, above the first insulating film, a conductive wire including an end portion decreasing in width toward a distal end;
- forming a second insulating film above the first insulating film and the conductive wire;
- etching the second insulating film that overhangs, when viewed from above the conductive wire, a region overlapping the end portion and the first insulating film that overhangs, when viewed from above the conductive wire, a region overlapping the region and not overlapping the conductive wire;
- forming a conductive material on the etched regions;
- and
- planarizing the conductive material to form a contact electrically connected to the end portion at least on a side surface of the end portion,
- the end portion including, in the contact, a first portion having a shortest distance from an outer peripheral surface of the contact and a second portion extending from the first portion and having a distance from the outer peripheral surface of the contact longer than the shortest distance.
Dependencies are inferred from the claim text.