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US 2016/0111640 A1Published application
Resistive random access memory
AssigneeNational Sun Yat-Sen University
InventorsTing-Chang Chang, Kuan-Chang Chang, Tsung-Ming Tsai, Tian-Jian Chu, Chih-Hung Pan
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Abstract
A resistive random access memory including two electrode layers and a multi-resistance layer mounted between the two electrode layers. The multi-resistance layer consists essentially of insulating material with oxygen and lithium ions. The number of resistance states of a memory element can be increased by the resistive random access memory to increase the integration density of a memory module having a plurality of memory elements.
Claims5
A resistive random access memory comprising:
- two electrode layers;
- and
- a multi-resistance layer mounted between the two electrode layers, with the multi-resistance layer consisting essentially of insulating material with oxygen and lithium ions.
Dependencies are inferred from the claim text.