Select device for memory cell applications
AssigneeMicron Technology, Inc.
InventorsDavid H. Wells, Christopher D. Cardon, Caner Onal
Life of this patent
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Abstract
The present disclosure includes select devices and methods of using select device for memory cell applications. An example select device includes a first electrode having a particular geometry, a semiconductor material formed on the first electrode and a second electrode having the particular geometry with formed on the semiconductor material, wherein the select device is configured to snap between resistive states in response to signals that are applied to the select device.
Claims31
A memory cell, comprising:
- a select device including:
- a first electrode having a particular geometry;
- a semiconductor material formed on the first electrode;
- and
- a second electrode having the particular geometry with formed on the semiconductor material, wherein the select device is configured to snap between resistive states in response to signals that are applied to the select device.
A memory cell, comprising:
- a select device including:
- a first electrode having a particular geometry;
- a semiconductor material formed on the first electrode;
- a second electrode having the particular geometry formed on the semiconductor material;
- and
- an insulator material formed on a sidewall of the first electrode, a sidewall of the semiconductor material, and a sidewall of the second electrode.
A method of operating a memory cell, the method comprising:
- providing a first signal to a select device of the resistive memory cell during a first time period, wherein the select device snaps from a first resistive state to a second resistive state in response to the signal being greater than a threshold voltage;
- and
- providing a second signal to the select device of the resistive memory cell during a second time period, wherein the select device remains in the first resistive state in response to the signal being less than the threshold voltage.
A method of forming a resistive memory cell of an array of resistive memory cells, the method comprising:
- forming a select device, wherein the select device includes a first electrode having a particular geometry, a semiconductor material, a second electrode having the particular geometry, and an insulator material formed on sidewalls of the first electrode, the semiconductor material, and the second electrode;
- forming a voltage buffer in series with the select device;
- forming a resistive storage element in series with the select device and the two terminal voltage buffer.
Dependencies are inferred from the claim text.