Living resistive memory device
AssigneeCommissariat A L'energie Atomique Et Aux Energies Alternatives
InventorsGabriel MOLAS, Marinela BARCI
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Abstract
A resistive random access memory device includes a first electrode; a solid metal oxide electrolyte; and a second electrode, the first and second electrodes being respectively arranged on either side of the solid metal oxide electrolyte, the second electrode being capable of supplying mobile ions circulating in the solid metal oxide electrolyte to the first electrode to form a conductive filament between the first and second electrodes when a potential difference is applied between the first and second electrodes. The device further includes an interface layer including a metal oxide, the interface layer extending at least partially onto the first electrode, the solid metal oxide electrolyte extending at least partially onto the interface layer.
Claims10
A method of first formation of a conductive filament in a resistive random access memory device the resistive random access memory device comprising:
- a first electrode;
- a solid metal oxide electrolyte;
- a second electrode, the first and second electrodes being respectively arranged on either side of said solid metal oxide electrolyte, the second electrode being capable of supplying mobile ions circulating in the solid metal oxide electrolyte to the first electrode to form a conductive filament between the first and second electrodes when a potential difference is applied between the first and second electrodes;
- an interface layer including a metal oxide, the interface layer extending at least partially onto the first electrode, the solid metal oxide electrolyte extending at least partially onto the interface layer;
- the method comprising:
- performing a pre-forming step according to which, the resistive random access memory device being in a first insulating state and having a first resistance, a first electrical potential is applied to the first electrode and a second electrical potential is applied to the second electrode, the second electrical potential being less than the first electrical potential, for the formation of a localised path of oxygen vacancies between the first and second electrodes, the resistive random access memory device at the end of said pre-forming step being in a second insulating state and having a second resistance less than the first resistance;
- performing a forming step according to which, the resistive random access memory device being in the second insulating state, a first electrical potential is applied to the first electrode and a second electrical potential is applied to the second electrode, the second electrical potential being greater than the first electrical potential, for the formation of the conductive filament between the first and second electrodes, the resistive random access memory device at the end of said forming step being in a conducting state.
Dependencies are inferred from the claim text.