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US 2016/0111636 A1Published application
Phase change memory element
AssigneeHiggs Opl. Capital LLC
InventorsFrederick T. Chen, Ming-Jinn Tsai
Life of this patent
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Abstract
A phase-change memory element with an electrically isolated conductor is provided. The phase-change memory element includes: a first electrode and a second electrode; a phase-change material layer electrically connected to the first electrode and the second electrode; and at least two electrically isolated conductors, disposed between the first electrode and the second electrode, directly contacting the phase-change material layers.
Claims20
A phase-change memory, comprising:
- a first electrode;
- a second electrode;
- an electrically-isolated conductor located between the first electrode and the second electrode;
- and
- a phase-change material that contacts each of the first electrode, the second electrode, and the electrically-isolated conductor;
- wherein the electrically-isolated conductor includes at least one of a thickness greater than a width of the phase-change material or a tapered end.
3 more elements
A phase-change memory, comprising:
- a first electrode;
- a second electrode;
- an electrically-isolated conductor located between the first electrode and the second electrode;
- and
- a phase-change material that contacts each of the first electrode, the second electrode, and the electrically-isolated conductor;
- wherein the electrically-isolated conductor includes a thickness greater than a width of the phase-change material.
3 more elements
A phase-change memory, comprising:
- a first electrode;
- a second electrode;
- an electrically-isolated conductor located between the first electrode and the second electrode;
- and
- a phase-change material that contacts each of the first electrode, the second electrode, and the electrically-isolated conductor;
- wherein the electrically-isolated conductor includes a pointed top.
3 more elements
Dependencies are inferred from the claim text.