Amorphous alloy spacer for perpendicular mtjs
AssigneeQUALCOMM Incorporated
InventorsKangho Lee, Wei-Chuan Chen, Seung Kang
Life of this patent
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Abstract
A perpendicular magnetic tunnel junction (MTJ) apparatus includes a tunnel magnetoresistance (TMR) enhancement buffer layer deposited between the tunnel barrier layer and the reference layers. An amorphous alloy spacer is deposited between the TMR enhancement buffer layer and the reference layers to enhance TMR. The amorphous alloy spacer blocks template effects of face centered cubic (fcc) oriented pinned layers and provides strong coupling between the pinned layers and the TMR enhancement buffer layer to ensure full perpendicular magnetization.
Claims12
A perpendicular magnetic tunnel junction (MTJ) apparatus comprising:
- a tunnel barrier layer deposited between a bottom free layer and a reference layer;
- an amorphous alloy perpendicular magnetic anisotropy (PMA) enhancement spacer deposited on the bottom free layer;
- and
- a top free layer deposited on the PMA enhancement spacer.
A method for constructing a perpendicular magnetic tunnel junction (MTJ) apparatus, comprising:
- depositing a tunnel barrier layer between a bottom free layer and a reference layer;
- depositing an amorphous alloy perpendicular magnetic anisotropy (PMA) enhancement spacer on the bottom free layer;
- and
- depositing a top free layer on the PMA enhancement spacer.
A perpendicular magnetic tunnel junction (MTJ) apparatus comprising:
- means for increasing exchange coupling to a TMR enhancement buffer layer;
- and
- means for increasing surface anisotropy between a top free layer and a bottom free layer.
Dependencies are inferred from the claim text.