Method and Device for Huge Magnetoresistance in Graphene-Based Magnetic Tunnel Junctions with Segmented Potentials
AssigneeNational Taiwan University
InventorsWen-Jeng Hsueh, Chang-Hung Chen
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Abstract
A graphene-based magnetic tunnel junction is disclosed. The magnetic tunnel junction can enhance the tunnel magnetoresistance ratio and a device including the magnetic tunnel junction. The magnetic tunnel junction includes: a pinned layer; a free layer; and a graphene with segmented potentials configured between the pinned layer and the free layer. The magnetic tunnel junction may be a series or parallel connection of the above-mentioned basic form. The device including a magnetic tunnel junction may be a magnetic random access memory bit cell, a magnetic tunnel junction transistor device, a magnetic field sensor, etc.
Claims20
A magnetic tunnel junction, comprising:
- a pinned layer;
- a free layer;
- and
- a periodic graphene nanoribbon layer having a plurality of segmented units, and disposed between the pinned layer and the free layer,
- wherein each of the plurality of segmented units includes at least one first segment and at least one second segment having a potential difference therebetween.
A magnetic tunnel junction, comprising:
- a pinned layer;
- a free layer;
- and
- a first graphene layer having a plurality of segmented potentials and disposed between the pinned layer and the free layer.
A method for forming a magnetic tunnel junction, comprising steps of:
- providing a pinned layer;
- providing a free layer;
- and
- providing a graphene having a plurality of segmented potentials between the pinned layer and the free layer.
Dependencies are inferred from the claim text.