Memory cells, semiconductor devices, and methods of fabrication

A memory cell, comprising:

• a magnetic region comprising cobalt (Co) and iron (Fe), the magnetic region exhibiting a switchable magnetic orientation;
• an oxide region disposed between the magnetic region and another magnetic region exhibiting a substantially fixed magnetic orientation;
• another oxide region adjacent the magnetic region and comprising oxygen concentrated proximate an interface with the magnetic region;
• and
• an amorphous getter seed region adjacent the another oxide region, the amorphous getter seed region comprising oxygen, boron, an oxygen-getter species, and a boron-getter species, the boron-getter species comprising tungsten (W), ruthenium (Ru), and nitrogen (N).

A method of forming a memory cell, comprising:

• forming a precursor structure, comprising:
• forming a precursor getter seed material over a substrate, the precursor getter seed material comprising:
• tungsten and nitrogen,
• tungsten, ruthenium, and boron,
• tungsten and ruthenium, or
• iron, cobalt, and tungsten,
• forming a precursor oxide material over the precursor getter seed material;
• forming a precursor magnetic material over the precursor oxide material;
• and
• diffusing a diffusive species from the precursor magnetic material and diffusing oxygen from the precursor oxide material to the precursor getter seed material to convert at least a portion of the precursor magnetic material into a depleted magnetic material, to convert at least a portion of the precursor oxide material into an oxygen-depleted material, and to convert at least a portion of the precursor getter seed material into an enriched getter seed material;
• and
• patterning the precursor structure to form a cell core structure comprising:
• a getter seed region from the enriched getter seed material;
• a secondary oxide region formed from the oxygen-depleted material;
• and
• a free region formed from the depleted magnetic material.

A method of forming a semiconductor structure, comprising:

• forming an amorphous precursor getter seed material over a substrate, the amorphous precursor getter seed material comprising a boron-getter species and an oxygen-getter species;
• forming a precursor oxide material comprising oxygen over the amorphous precursor getter seed material;
• forming a precursor magnetic material comprising boron over the precursor oxide material;
• forming another oxide material over the precursor magnetic material;
• and
• annealing at least the precursor magnetic material and the precursor oxide material to react the boron from the precursor magnetic material with the boron-getter species of the amorphous precursor getter seed material and to react the oxygen from the precursor oxide material with the oxygen-getter species of the amorphous precursor getter seed material.

A semiconductor device, comprising:

• a spin torque transfer magnetic random access memory (STT-MRAM) array comprising:
• STT-MRAM cells, at least one STT-MRAM cell of the STT-MRAM cells comprising:
• a magnetic tunnel junction sub-structure over a substrate, the magnetic tunnel junction sub-structure comprising:
• a free region exhibiting a vertical, switchable magnetic orientation;
• a fixed region exhibiting a vertical, substantially fixed magnetic orientation;
• and
• an intermediate oxide region between the free region and the fixed region;
• another oxide region contacting the free region;
• and
• an amorphous region proximate the free region and the another oxide region, the amorphous region comprising boron and oxygen.