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US 2016/0111630 A1Published application
Semiconductor device having magnetic shield layer surrounding mram chip
AssigneeKabushiki Kaisha Toshiba
InventorTakeshi FUJIMORI
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Abstract
A semiconductor device includes a MRAM chip including a semiconductor substrate and a memory cell array area includes magnetoresistive elements which are provided on the semiconductor substrate, and a magnetic shield layer surrounding the memory cell array area in a circumferential direction of the MRAM chip, and having a closed magnetic path.
Claims17
A semiconductor device comprising:
- a MRAM chip including a semiconductor substrate, and a memory cell array area comprising magnetoresistive elements which are provided on the semiconductor substrate;
- a circuit board on which the MRAM chip is mounted;
- a magnetic shield layer surrounding the memory cell array area in a circumferential direction of the MRAM chip, and having a closed magnetic path;
- and
- wherein the magnetic shield layer comprises a first magnetic layer between a lower surface of the MRAM chip and the circuit board, and a second magnetic layer covering an upper surface and a side surface of the MRAM chip.
2 more elements
A semiconductor device comprising:
- an MRAM chip including a semiconductor substrate, and a memory cell array area comprising magnetoresistive elements which are provided on the semiconductor substrate;
- a magnetic shield layer surrounding the memory cell array area in a circumferential direction of the MRAM chip, and having a closed magnetic path;
- wherein the magnetic shield layer is provided outside of the MRAM chip and is in direct contact with an upper surface, a lower surface, and side surfaces of the MRAM chip;
- and
- wherein the magnetic shield layer has an opening on the upper surface of the MRAM chip in which a pad of the MRAM chip is exposed.
2 more elements
Dependencies are inferred from the claim text.