Piezoelectric element, method for manufacturing the same, and piezoelectric element-applied device
AssigneeSeiko Epson Corporation
InventorsTakayuki YONEMURA, Tsutomu ASAKAWA
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Abstract
A piezoelectric element has, from a substrate side, a first electrode, a piezoelectric layer containing a composite oxide of an ABO3 type perovskite structure containing Mg, and a second electrode, which are laminated, in which the first electrode includes a diffusion suppressing layer which suppresses diffusion of the Mg and a diffusion layer which diffuses the Mg as compared with the diffusion suppressing layer, and the diffusion suppressing layer is provided on the substrate side relative to the diffusion layer.
Claims8
A piezoelectric element comprising:
- a substrate;
- a first electrode provided on the substrate, the first electrode including a diffusion suppressing layer which suppresses diffusion of the Mg and a diffusion layer which diffuses the Mg as compared with the diffusion suppressing layer, the diffusion suppressing layer is provided on the substrate side relative to the diffusion layer;
- a piezoelectric layer provided on the first electrode, the piezoelectric layer including a composite oxide of an ABO3 type perovskite structure containing Mg;
- and
- a second electrode provided on the piezoelectric layer.
A method for manufacturing a piezoelectric element including, from a substrate side, a first electrode, a piezoelectric layer containing a composite oxide of an ABO3 type perovskite structure containing Mg, and a second electrode, which are laminated, the method comprising:
- forming the first electrode, the formation of the first electrode including:
- providing a diffusion suppressing layer which suppresses diffusion of the Mg;
- and
- providing a diffusion layer which diffuses the Mg as compared with the diffusion suppressing layer on the diffusion suppressing layer.
Dependencies are inferred from the claim text.