Wafer level packaging of electronic device

A method of wafer level packaging of an LED comprising of providing a bottom wafer, the bonding wafer including one or more blind vias extending from first surface of the bottom wafer;

• placing a passivation layer over at least a portion of the first surface of the bottom wafer;
• creating one or more metal pads on a surface of the passivation layer, wherein the one or more metal pads extend into the blind vias and cover a surface of the blind vias;
• creating one or more bond pads, wherein each bond pad is in contact with one of the one or more metal pads;
• attaching an LED device to at least a subset of the one or more bond pads;
• applying an encapsulation layer in contact with the LED device;
• attaching a top wafer to the encapsulation layer;
• reducing a thickness of the bottom wafer to expose the metal pads at a bottom portion of the blind vias;
• applying an isolation layer to the bottom wafer;
• creating holes in the isolation layer to expose the metal pads;
• and
• forming electroplated structures in contact with the isolation layer and in contact with the metal pad.

A method of wafer level packaging an LED device comprising of providing a bottom wafer, the bonding wafer having a thickness;

• forming one or more blind vias extending from a first surface of the bottom wafer and only partially through the thickness of the bottom wafer;
• applying a passivation layer over at least a portion of the first surface of the bottom wafer and over a surface of the blind vias;
• creating one or more metal pads on a surface of the passivation layer, wherein the one or more metal pads over at least a portion of passivation layer on the first surface of the bottom wafer and that extend into the blind vias and cover a surface of the passivation layer within the blind vias;
• creating one or more bond pads, wherein each bond pad is in contact with one of the one or more metal pads;
• attaching an LED device to at least a subset of the one or more bond pads;
• applying an encapsulation layer in contact with the LED device;
• attaching a top wafer to the encapsulation layer;
• reducing a thickness of the bottom wafer to expose the metal pads at a bottom portion of the blind vias;
• applying an isolation layer to the bottom wafer;
• creating holes in the isolation layer to expose the metal pads at the bottom portion of the blind vias;
• and
• forming electroplated structures in contact with the isolation layer and in contact with the metal pad.