Method for Producing a Plurality of Optoelectronic Semiconductor Chips, and Optoelectronic Semiconductor Chip

A method for producing a plurality of optoelectronic semiconductor chips, the method comprising:

• depositing, on a substrate, a semiconductor layer sequence having an active region provided for generating and/or receiving radiation, the active region being arranged between a first semiconductor layer and a second semiconductor layer;
• forming a plurality of openings that extend through the second semiconductor layer and the active region and into the first semiconductor layer;
• attaching the semiconductor layer sequence to a support by producing a metallic connecting layer that connects the semiconductor layer sequence and the support at least in regions, the metallic connecting layer comprising a plurality of first regions and a plurality of second regions that are electrically insulated from the first regions;
• forming a plurality of recesses in the support;
• forming a plurality of first contacts and a plurality of second contacts, wherein each of the first contacts is connected to the first semiconductor layer in an electrically conductive manner via one of the first regions of the metallic connecting layer and through one of the openings, and each of the second contacts is connected to the second semiconductor layer in an electrically conductive manner via one of the second regions, electrically insulated from the first regions, of the metallic connecting layer, and wherein the first contacts are connected to the first regions in an electrically conductive manner through the recesses or the second contacts are connected to the second regions in an electrically conductive manner through the recesses;
• and
• singulating the semiconductor layer sequence into a plurality of optoelectronic semiconductor chips, wherein each semiconductor chip comprises at least one opening, at least one recess, at least one first region and at least one second region.

An optoelectronic semiconductor chip comprising:

• a semiconductor body that has a semiconductor layer sequence having an active region provided to generate and/or receive radiation, the active region arranged between a first semiconductor layer and a second semiconductor layer, the semiconductor layer sequence having an opening that extends through the second semiconductor layer and the active region and into the first semiconductor layer and that is at least partially filled with electrically conductive material;
• a support that comprises a recess;
• a metallic connecting layer between the semiconductor body and the support, wherein the metallic connecting layer comprises a first region and a second region electrically insulated from the first region, and wherein the first region is connected to the first semiconductor layer in an electrically conductive manner through the opening and the second region is connected to the second semiconductor layer in an electrically conductive manner;
• and
• a first contact and a second contact, wherein the first contact is connected to the first region in an electrically conductive manner through the recess or the second contact is connected to the second region in an electrically conductive manner through the recess.

A method for producing a plurality of optoelectronic semiconductor chips, the method comprising:

• depositing, on a growth substrate, a semiconductor layer sequence having an active region provided for generating and/or receiving radiation, the active region being arranged between a first semiconductor layer and a second semiconductor layer;
• forming a plurality of openings that extend through the second semiconductor layer and the active region and into the first semiconductor layer;
• attaching the semiconductor layer sequence to a support by producing a metallic connecting layer that connects the semiconductor layer sequence and the support at least in regions;
• forming a plurality of recesses in the support, after attaching the semiconductor layer sequence to the support;
• forming a plurality of first contacts and a plurality of second contacts, wherein each of the first contacts is connected to the first semiconductor layer in an electrically conductive manner via one of a plurality of first regions of the metallic connecting layer and through at least one of the openings, and each of the second contacts is connected to the second semiconductor layer in an electrically conductive manner via one of a plurality of second regions, electrically insulated from the first regions, of the metallic connecting layer, and wherein the first contacts are connected to the first regions in an electrically conductive manner through the recesses or the second contacts are connected to the second regions in an electrically conductive manner through the recesses;
• and
• singulating the growth substrate having the semiconductor layer sequence into the plurality of optoelectronic semiconductor chips, wherein each semiconductor chip comprises an opening, a recess, a first region and a second region.