Light-emitting diode and method for manufacturing same

A light-emitting diode, comprising:

• a support substrate;
• a semiconductor stack disposed on the support substrate, the semiconductor stack comprising a p-type compound semiconductor layer, an active layer and a n-type semiconductor layer;
• a reflective metal layer disposed between the support substrate and the semiconductor stack, the reflective metal layer being in ohmic contact with the p-type compound semiconductor layer of the semiconductor stack and comprising grooves respectively exposing portions of the semiconductor stack;
• first electrode pads contacting the n-type compound semiconductor layer of the semiconductor stack;
• electrode extensions respectively connected to each of the first electrode pads, each of the electrode extensions respectively overlapping each of the grooves;
• and
• an upper insulation layer disposed between the first electrode pad and the semiconductor stack,
• wherein:
• the electrode extension comprises an Ni layer contacting the n-type compound semiconductor layer, and at least two Au layers disposed on the Ni layer;
• and
• the reflective metal layer comprises plates respectively separated by one of the grooves.