Light emitting device having light extraction structure and method for manufacturing the same
AssigneesLG Innotek Co., Ltd., LG Electronics Inc.
InventorsHyun Kyong CHO, Sun Kyung KIM, Jun Ho JANG
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Abstract
A light emitting device including a support layer; a reflective electrode disposed on the support layer; an ohmic electrode disposed on the reflective electrode, the ohmic electrode including a transparent electrode; and a semiconductor structure disposed on the ohmic electrode, the semiconductor structure including a p-type semiconductor layer disposed on the ohmic electrode; a light emitting layer disposed on the p-type semiconductor layer; and an n-type semiconductor layer disposed on the light emitting layer. Further, the transparent electrode has a thickness in the range of 40 nm to 90 nm.
Claims20
A light emitting device, comprising:
- a support layer;
- a reflective electrode disposed on the support layer;
- an ohmic electrode disposed on the reflective electrode, the ohmic electrode comprising a transparent electrode;
- and
- a semiconductor structure disposed on the ohmic electrode, the semiconductor structure comprising:
- a p-type semiconductor layer disposed on the ohmic electrode;
- a light emitting layer disposed on the p-type semiconductor layer;
- and
- an n-type semiconductor layer disposed on the light emitting layer,
- wherein the transparent electrode has a thickness in the range of 40 nm to 90 nm.
Dependencies are inferred from the claim text.