Optoelectronic Component And Method For The Production Thereof
AssigneeOSRAM Opto Semiconductors GmbH
InventorsPeter NAGEL, Stefan ILLEK, Martin STRASSBURG
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Abstract
An optoelectronic device (10, 1010) having a semiconductor layer structure (100, 1100) comprising a first light-active layer (140) and a second light-active layer (240). A first tunnel junction (200) is formed between the first light-active layer (140) and the second light-active layer (240). A first Bragg reflector (160) is formed between the first light-active layer (140) and the first tunnel junction (200). A second Bragg reflector (260) is formed between the second light-active layer (240) and the first tunnel junction (200).
Claims18
An optoelectronic device
- having a semiconductor layer structure comprising a first light-active layer and a second light-active layer,
- wherein a first tunnel junction is formed between the first light-active layer and the second light-active layer,
- wherein a first Bragg reflector is formed between the first light-active layer and the first tunnel junction, and
- wherein a second Bragg reflector is formed between the second light-active layer and the first tunnel junction.
A method for producing an optoelectronic device
- comprising the following steps:
- providing a substrate;
- growing a first light-active layer;
- growing a first Bragg reflector;
- growing a second Bragg reflector;
- and
- growing a second light-active layer.
An optoelectronic device having a semiconductor layer structure comprising a first light-active layer and a second light-active layer,
- wherein a first tunnel junction is formed between the first light-active layer and the second light-active layer,
- wherein a first Bragg reflector is formed between the first light-active layer and the first tunnel junction,
- wherein a second Bragg reflector is formed between the second light-active layer and the first tunnel junction, wherein the first Bragg reflector is configured to reflect electromagnetic radiation from the first light-active layer which impinges on the first Bragg reflector, and
- wherein the second Bragg reflector is configured to reflect electromagnetic radiation from the second light-active layer which impinges on the second Bragg reflector.
Dependencies are inferred from the claim text.