Back to results
US 2016/0111592 A1Published application
Light emitting devices and methods of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsJun-youn KIM, Bok-ki MIN, Hyun-gi HONG, Jae-won LEE
Life of this patent
Estimating the term…
Abstract
Light emitting devices and methods of manufacturing the light emitting devices. The light emitting devices include a silicon substrate; a metal buffer layer on the silicon substrate, a patterned distributed Bragg reflector (DBR) on the metal buffer layer; and a nitride-based thin film layer on the patterned DBR and regions between patterns of the DBR.
Claims19
-11. (canceled)
A method of manufacturing a light emitting device, the method comprising:
- forming a metal buffer layer on a silicon substrate;
- forming an XY material layer on the metal buffer layer, wherein X is at least one of Ti, Cr, Zr, Hf, Nb, and Ta;
- and
- forming a GaN layer on the XY material layer,
- wherein the XY material layer has a first lattice constant and the GaN layer has a second lattice constant greater than the first lattice constant,
- wherein the XY material layer applies compressive strain to the GaN layer.
3 more elements
A method of manufacturing a light emitting device, the method comprising:
- forming a metal buffer layer on a silicon substrate;
- forming an XY material layer on the metal buffer layer, wherein X is at least one of Ti, Cr, Zr, Hf, Nb, and Ta;
- forming a plurality of holes in the XY material layer, the plurality of holes having a size on the order of nanometers;
- and
- forming a GaN layer on the XY material layer.
2 more elements
Dependencies are inferred from the claim text.