Manufacturing Method of Semiconductor Film, Manufacturing Method of Semiconductor Device, and Manufacturing Method of Photoelectric Conversion Device

A manufacturing method of a photoelectric conversion device, comprising the steps of:

• forming a first electrode over a substrate;
• forming a first semiconductor film over the first electrode, the first semiconductor film having a first conductivity type;
• forming a second semiconductor film over the first semiconductor film, the second semiconductor film having a function of photoelectric conversion;
• forming a third semiconductor film over the second semiconductor film, the third semiconductor film having a second conductivity type;
• and
• forming a second electrode over the third semiconductor film,
• wherein at least one of the first semiconductor film and the third semiconductor film comprises an amorphous semiconductor film formed by a method comprising the steps of:
• introducing a mixture of a deposition gas containing silicon and a gas containing an impurity element as a source gas into a reaction chamber;
• setting pressure and an electrode distance in the reaction chamber so that discharge inception voltage is minimum discharge inception voltage in a Paschen curve;
• and
• applying pulse-modulated discharge inception voltage to electrodes wherein the pulse-modulated discharge inception voltage is obtained by pulse-modulating the discharge inception voltage.