Method of manufacturing a low noise photodiode
AssigneeCommissariat A L'energie Atomique Et Aux Energies Alternatives
InventorsOlivier GRAVRAND, Johan ROTHMAN
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Abstract
A method of manufacturing a photodiode including a useful layer made of a semi-conductor alloy. The useful layer has a band gap value which decreases from its upper face to its lower face. A step of producing a first doped region forming a PN junction with a second doped region of the useful layer, said production of a first doped region including a first doping step, so as to produce a base portion; and a second doping step, so as to produce at least one protuberance protruding from the base portion and in the direction of the lower face.
Claims15
A method of manufacturing a photodiode comprising a useful layer made of a semi-conductor alloy, the useful layer having a band gap value which decreases from a first so-called upper face to an opposite so-called lower face, wherein a step of producing a first doped region situated in the useful layer and forming a PN junction with a second doped region of the useful layer, said production of a first doped region comprising:
- a first doping step, so as to produce a base portion of the first doped region;
- and
- a second doping step, so as to produce at least one protuberance of the first doped region, said protuberance protruding from the base portion and in the direction of the lower face of the useful layer, such that the average band gap value in the protuberance is less than the average band gap value in the base portion.
A photodiode comprising a useful layer made of a semi-conductor alloy, the useful layer having:
- a band gap value which decreases from a first so-called upper face of the useful layer to an opposite so-called lower face, and
- a PN junction, between a first doped region and a second doped region surrounding the first doped region;
- wherein the first doped region comprises:
- a base portion;
- and
- at least one protuberance, protruding from the base portion and in the direction of the lower face of the useful layer, such that the average band gap value in the protuberance is less than the average band gap value in the base portion.
Dependencies are inferred from the claim text.