Lattice matchable alloy for solar cells
AssigneeSolar Junction Corporation
InventorsREBECCA ELIZABETH JONES-ALBERTUS, HOMAN BERNARD YUEN, TING LIU, PRANOB MISRA
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Abstract
An alloy composition for a subcell of a solar cell is provided that has a bandgap of at least 0.9 eV, namely, Ga1-xInxNyAs1-y-zSbz with a low antimony (Sb) content and with enhanced indium (In) content and enhanced nitrogen (N) content, achieving substantial lattice matching to GaAs and Ge substrates and providing both high short circuit currents and high open circuit voltages in GaInNAsSb subcells for multijunction solar cells. The composition ranges for Ga1-xInxNyAs1-y-zSbz are 0.07≦x≦0.18, 0.025≦y≦0.04 and 0.001≦z≦0.03.
Claims12
An electron generating junction comprising a semiconductor alloy composition, wherein the semiconductor alloy composition is Ga1-xInxNyAs1-y-zSbz wherein, the content values for x, y, and z are within composition ranges as follows:
- 0.07≦x≦0.18, 0.025≦y≦0.04 and 0.001≦z≦0.03;
- the content levels are selected such that the semiconductor alloy composition exhibits a bandgap from 0.9 eV to 1.1 eV;
- and a short circuit current density Jsc greater than 13 mA/cm2 and an open circuit voltage Voc greater than 0.3 V when illuminated with a filtered 1 sun AM1.5D spectrum in which all light having an energy greater than the bandgap of GaAs is blocked.
Dependencies are inferred from the claim text.