Semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsYoshimitsu KUWAHARA, Hideaki KITAZAWA, Eitaro MIYAKE
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Abstract
A semiconductor device, such as a pressure contact type semiconductor device, includes a frame body comprising ceramic and having an annular cylindrical shape which satisfies a relationship: (2/5E)·(D/t)3≦17.4, when the inner diameter of the frame body is D (in mm), the thickness of the frame body in a radial direction is t (in mm), and the Young's modulus of the ceramic is E (in GPa). A plurality of semiconductor elements are enclosed within an interior spaced formed by at least the frame body, a first electrode block disposed on one side of the semiconductor elements, and a second electrode block disposed on another side of the semiconductor elements.
Claims20
A semiconductor device, comprising:
- a frame body comprising ceramic and having an annular cylindrical shape, the frame body satisfying:
- (2/5E)·(D/t)3≦17.4
- where an inner diameter of the frame body is D (in mm), a thickness of the frame body in a radial direction is t (in mm), and the Young's modulus of the ceramic is E (in GPa);
- a plurality of semiconductor elements disposed inside the frame body;
- a first electrode block disposed on a first side of the plurality of semiconductor elements;
- and
- a second electrode block disposed on a second side of the plurality of semiconductor elements, wherein
- the plurality of semiconductor elements are enclosed within an interior space formed by at least the frame body, the first electrode block, and the second electrode block.
A pressure contact type semiconductor device, comprising:
- a semiconductor element hermetically sealed within in an interior space formed by:
- a frame body,
- a first electrode block on a first side of the semiconductor element,
- a second electrode block on a second side of the semiconductor element,
- a first flange joined to the frame body and the first electrode block, and
- a second flange joined to the frame body and the second electrode block;
- the frame body comprising ceramic and having an annular cylindrical shape that satisfies:
- (2/5E)·(D/t)3≦17.4
- where an inner diameter of the frame body is D (in mm), a thickness of the frame body in a radial direction is t (in mm), and the Young's modulus of the ceramic is E (in GPa).
A method, comprising:
- forming a frame body comprising ceramic and having an annular cylindrical shape that satisfies:
- (2/5E)·(D/t)3≦17.4
- where an inner diameter of the frame body is D (in mm), a thickness of the frame body in a radial direction is t (in mm), and Young's modulus of the ceramic is E (in GPa);
- and
- enclosing a plurality of semiconductor elements in an interior space formed by at least the frame body, a first electrode block on a first side of the plurality of semiconductor elements, and a second electrode block on a second side of the plurality of semiconductor elements.
Dependencies are inferred from the claim text.