Back to results
US 2016/0111552 A1Published application
Semiconductor Device And Manufacturing Method Thereof
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei YAMAZAKI, Jun Koyama
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes an oxide semiconductor layer, a source electrode and a drain electrode electrically connected to the oxide semiconductor layer, a gate insulating layer covering the oxide semiconductor layer, the source electrode, and the drain electrode, and a gate electrode over the gate insulating layer. The source electrode and the drain electrode include an oxide region formed by oxidizing a side surface thereof. Note that the oxide region of the source electrode and the drain electrode is preferably formed by plasma treatment with a high frequency power of 300 MHz to 300 GHz and a mixed gas of oxygen and argon.
Claims19
(canceled)
A semiconductor device comprising:
- an oxide semiconductor layer;
- a gate electrode;
- a gate insulating film between the oxide semiconductor layer and the gate electrode;
- a first conductive layer on the oxide semiconductor layer;
- and
- a second conductive layer on the oxide semiconductor layer,
- wherein a side portion of the first conductive layer is covered with a first metal oxide layer, and
- wherein a side portion of the second conductive layer is covered with a second metal oxide layer.
5 more elements
A semiconductor device comprising:
- an oxide semiconductor layer;
- a gate electrode;
- a gate insulating film between the oxide semiconductor layer and the gate electrode;
- a first oxide conductive layer on the oxide semiconductor layer;
- a first conductive layer over the first oxide conductive layer;
- a second oxide conductive layer on the oxide semiconductor layer;
- a second conductive layer over the second oxide conductive layer;
- wherein a side portion of the first conductive layer is covered with a first metal oxide layer, and
- wherein a side portion of the second conductive layer is covered with a second metal oxide layer.
6 more elements
A semiconductor device comprising:
- an oxide semiconductor layer;
- a gate electrode;
- a gate insulating film between the oxide semiconductor layer and the gate electrode;
- a first conductive layer including copper on the oxide semiconductor layer;
- a second conductive layer including copper on the oxide semiconductor layer,
- wherein a side portion of the first conductive layer is covered with a first metal oxide layer including copper, and
- wherein a side portion of the second conductive layer is covered with a second metal oxide layer including copper.
4 more elements
A semiconductor device comprising:
- an oxide semiconductor layer;
- a gate electrode;
- a gate insulating film between the oxide semiconductor layer and the gate electrode;
- a first oxide conductive layer on the oxide semiconductor layer;
- a first conductive layer including copper over the first oxide conductive layer;
- a second oxide conductive layer on the oxide semiconductor layer;
- a second conductive layer including copper over the second oxide conductive layer;
- wherein a side portion of the first conductive layer is covered with a first metal oxide layer including copper, and
- wherein a side portion of the second conductive layer is covered with a second metal oxide layer including copper.
6 more elements
A semiconductor device comprising:
- an oxide semiconductor layer;
- a gate electrode;
- a gate insulating film between the oxide semiconductor layer and the gate electrode;
- a first conductive layer including copper on the oxide semiconductor layer;
- a second conductive layer including copper on the oxide semiconductor layer,
- wherein a side portion of the first conductive layer is covered with a first metal oxide layer including copper,
- wherein a side portion of the second conductive layer is covered with a second metal oxide layer including copper,
- wherein the oxide semiconductor layer comprises indium, gallium, and zinc,
- wherein the oxide semiconductor layer includes a crystalline region, and
- wherein the crystalline region aligns so that c-axis of the crystalline region is perpendicular to a surface of the oxide semiconductor layer.
7 more elements
A semiconductor device comprising:
- an oxide semiconductor layer;
- a gate electrode;
- a gate insulating film between the oxide semiconductor layer and the gate electrode;
- a first oxide conductive layer on the oxide semiconductor layer;
- a first conductive layer including copper over the first oxide conductive layer;
- a second oxide conductive layer on the oxide semiconductor layer;
- a second conductive layer including copper over the second oxide conductive layer;
- wherein a side portion of the first conductive layer is covered with a first metal oxide layer including copper,
- wherein a side portion of the second conductive layer is covered with a second metal oxide layer including copper,
- wherein the oxide semiconductor layer comprises indium, gallium, and zinc,
- wherein the oxide semiconductor layer includes a crystalline region, and
- wherein the crystalline region aligns so that c-axis of the crystalline region is perpendicular to a surface of the oxide semiconductor layer.
9 more elements
Dependencies are inferred from the claim text.