Semiconductor device and manufacturing method thereof, module, and electronic device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei YAMAZAKI, Akihisa SHIMOMURA, Yasumasa YAMANE, Naoto YAMADE, Tetsuhiro TANAKA
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Abstract
A transistor with stable electrical characteristics or a transistor with normally-off electrical characteristics. The transistor is a semiconductor device including a conductor, a semiconductor, a first insulator, and a second insulator. The semiconductor is over the first insulator. The conductor is over the semiconductor. The second insulator is between the conductor and the semiconductor. The first insulator includes fluorine and hydrogen. The fluorine concentration of the first insulator is higher than the hydrogen concentration of the first insulator.
Claims41
A semiconductor device comprising:
- a first insulator;
- a second insulator;
- a conductor;
- and
- a semiconductor between the first insulator and the second insulator,
- wherein the second insulator is between the semiconductor and the conductor,
- wherein the first insulator includes fluorine and hydrogen, and
- wherein a fluorine concentration of the first insulator is higher than a hydrogen concentration of the first insulator.
A semiconductor device comprising:
- a conductor;
- a first insulator;
- a second insulator;
- and
- a semiconductor between the first insulator and the second insulator,
- wherein the second insulator is between the conductor and the semiconductor,
- wherein the second insulator includes fluorine and hydrogen, and
- wherein a fluorine concentration of the second insulator is higher than a hydrogen concentration of the second insulator.
A method of manufacturing a semiconductor device, comprising the steps of:
- forming a conductor;
- forming a first insulator over the conductor;
- forming a semiconductor over the conductor with the first insulator positioned therebetween;
- forming a second insulator over the semiconductor;
- forming a third insulator over the second insulator;
- and
- adding fluorine to the second insulator through the third insulator.
A method of manufacturing a semiconductor device, comprising the steps of:
- forming a semiconductor;
- forming a first insulator over the semiconductor;
- forming a second insulator over the first insulator;
- adding fluorine to the first insulator through the second insulator;
- and
- forming a conductor over the semiconductor with the first insulator and the second insulator positioned therebetween.
A method of manufacturing a semiconductor device, comprising the steps of:
- forming a first insulator;
- forming a second insulator over the first insulator;
- adding fluorine to the first insulator through the second insulator;
- forming a semiconductor;
- forming a third insulator over the semiconductor;
- and
- forming a first conductor over the semiconductor with the third insulator positioned therebetween.
Dependencies are inferred from the claim text.