Method of fabricating electrostatically enhanced fins and stacked nanowire field effect transistors
AssigneeInternational Business Machines Corporation
InventorsKangguo Cheng, Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek
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Abstract
Non-planar semiconductor devices including semiconductor fins or stacked semiconductor nanowires that are electrostatically enhanced are provided. The electrostatic enhancement is achieved in the present application by epitaxially growing a semiconductor material protruding portion on exposed sidewalls of alternating semiconductor material portions of at least one hard mask capped semiconductor-containing fin structure that is formed on a substrate.
Claims13
A method of forming a semiconductor structure comprising:
- providing a semiconductor-containing fin structure on a surface of a base layer, wherein said semiconductor-containing fin structure comprises, from bottom to top, and in an alternating manner, at least one first semiconductor material portion having a first oxidation rate, and at least one second semiconductor material portion having a second oxidation rate, wherein said first oxidation rate is slower than the second oxidation rate;
- performing an oxidation process to form an oxide liner portion on each of said first semiconductor material portions and to completely convert each of said second semiconductor material portions into an oxide structure;
- completely removing said first oxide liner portion from each of said first semiconductor material portions and each of said oxide structures;
- and
- epitaxially growing a semiconductor material protruding portion from an exposed semiconductor sidewall surface of each of said first semiconductor material portions.
A semiconductor structure comprising:
- a semiconductor-containing fin structure on a surface of a base layer, wherein said semiconductor-containing fin structure comprises, from bottom to top, and in an alternating manner, at least one first semiconductor material portion, and at least one second semiconductor material portion, wherein each of said at least one second semiconductor material portions has a width that is less than a width of each of said at least one first semiconductor material portions;
- an oxide cap portion located on a sidewall of each of said at least one second semiconductor material portions, wherein a sidewall surface of said oxide cap portion is vertically coincident with a sidewall surface of each of said at least one first semiconductor material portions;
- and
- a semiconductor material protruding portion located on said sidewall surface of each of said first semiconductor material portions.
A semiconductor structure comprising:
- a vertical stack of semiconductor nanowires located atop on a surface of a base layer;
- and
- a semiconductor material protruding portion located on a sidewall surface of each of said semiconductor nanowires.
Dependencies are inferred from the claim text.