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US 2016/0111541 A1Published application
Gate last semiconductor structure and method for forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChe-Cheng CHANG, Chih-Han LIN, Jr-Jung LIN
Life of this patent
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Abstract
A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a substrate and a metal gate structure formed over a fin structure of the substrate. The semiconductor structure further includes a spacer formed on a sidewall of the metal gate structure and a source/drain structure formed in the fin structure. In addition, the spacer is in direct contact with the fin structure.
Claims22
A semiconductor structure, comprising:
- a substrate;
- a metal gate structure formed over a fin structure of the substrate;
- a spacer formed on a sidewall of the metal gate structure;
- and
- a source/drain structure formed in the fin structure,
- wherein the source/drain structure has an extending portion extending into a recess of the spacer.
3 more elements
(canceled)
A semiconductor structure, comprising:
- a substrate;
- a gate structure formed over the substrate;
- a spacer formed on a sidewall of the gate structure;
- a source/drain structure formed in the structure,
- wherein the source/drain structure has an extending portion extending into a recess of the spacer.
2 more elements
14-20. (canceled)
A semiconductor structure, comprising:
- a substrate;
- a gate structure formed across a fin structure over the substrate;
- a spacer formed on a sidewall of the gate structure and directly contacting the fin structure;
- and
- a source/drain structure formed in the fin structure,
- wherein the source/drain structure has an extending portion extending under the spacer into a recess of the spacer.
3 more elements
Dependencies are inferred from the claim text.