Semiconductor devices and methods of forming the same
AssigneeSamsung Electronics Co., Ltd.
InventorsDonghyun Roh, Pankwi Park, Dongsuk Shin, Chulwoong Lee, Naein Lee
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Abstract
According to embodiments of the inventive concept, a gate electrode is formed on a substrate, and a first spacer, a second spacer, and a third spacer are sequentially formed on a sidewall of the gate electrode. The substrate is etched to form a recess region. A compressive stress pattern is formed in the recess region. A protective spacer is formed on a sidewall of the third spacer. When the recess region is formed, a lower portion of the second spacer is removed to form a gap region between the first and third spacers. The protective spacer fills the gap region.
Claims6
A semiconductor device comprising:
- a substrate;
- a gate dielectric layer on the substrate;
- a gate electrode on the gate dielectric layer wherein the gate electrode includes at least one sidewall;
- an inner spacer and an outer spacer provided on the sidewall of the gate electrode, wherein the inner spacer is positioned between the outer spacer and the sidewall of the gate electrode;
- and
- a compressive stress pattern provided in the substrate adjacent to the gate electrode, wherein a top surface of the compressive stress pattern is closer to a bottom surface of the substrate than is a bottom surface of the gate dielectric layer;
- wherein a top surface of the inner spacer is at a height from the substrate that is greater than half of a height that the gate electrode extends from the substrate and is closer to the substrate than is a top surface of the gate electrode;
- and
- wherein the outer spacer extends between the inner spacer and the compressive stress pattern.
Dependencies are inferred from the claim text.