Contact resistance reduction technique
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChun Hsiung Tsai, Ming-Te Chen
Life of this patent
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Abstract
An embodiment is a method of manufacturing a semiconductor device, the method including forming a first gate over a substrate, forming a recess in the substrate adjacent the first gate, epitaxially forming a strained material stack in the recess, the strained material stack comprising at least three layers, each of the at least three layers comprising a dopant. The method further includes co-implanting the strained material stack with dopants comprising boron, germanium, indium, tin, or a combination thereof, forming a metal layer on the strained material stack, and annealing the metal layer and the strained material stack forming a metal-silicide layer.
Claims21
A method of manufacturing a semiconductor device, the method comprising:
- forming a first gate over a substrate;
- forming a recess in the substrate adjacent the first gate;
- epitaxially forming a strained material stack in the recess, the strained material stack comprising at least three layers, each of the at least three layers comprising a dopant;
- co-implanting the strained material stack with dopants comprising boron, germanium, indium, tin, or a combination thereof;
- forming a metal layer on the strained material stack;
- and
- annealing the metal layer and the strained material stack forming a metal-silicide layer.
A method of forming a Fin Field-Effect Transistor (FinFET), the method comprising:
- forming a plurality of fins extending from a substrate;
- forming a dummy gate over the plurality of fins;
- forming recesses in the plurality of fins adjacent the dummy gate;
- epitaxially forming a plurality of strained material stacks in the recesses in the plurality of fins, each of the strained material stacks comprising a germanium-tin (GeSn) layer and a boron-doped (B-doped) silicon-germanium (SiGeB) layer;
- implanting the strained material stacks with B, indium (In), Sn, or a combination thereof;
- forming a metal layer on the strained material stacks;
- performing a microwave anneal (MWA) process on the metal layer and the strained material stacks to form metal-silicide layers on the strained material stacks;
- and
- forming a metal contact to the strained material stacks, the metal contact contacting the metal-silicide layers.
-20. (canceled)
A method of forming a Fin Field-Effect Transistor (FinFET), the method comprising:
- forming a plurality of fins extending from a substrate;
- forming a first gate over the plurality of fins;
- forming recesses in the plurality of fins adjacent the first gate;
- epitaxially forming a plurality of strained material stacks in the recesses in the plurality of fins, the strained material stacks comprising a plurality of epitaxial layers;
- co-implanting the strained material stacks with boron (B), indium (In), tin (Sn), antimony (Sb), or a combination thereof;
- removing the first gate;
- forming a second gate in place of the first gate;
- and
- performing a pre-amorphization implant (PAI) on the strained material stacks.
Dependencies are inferred from the claim text.