Semiconductor device structure and manufacturing method thereof

A method of manufacturing a semiconductor device comprising:

• receiving a FinFET precursor comprising:
• a fin structure formed between isolation regions;
• and
• a gate structure formed over a portion of the fin structure such that a sidewall of the fin structure is in contact with a gate spacer of the gate structure;
• patterning the fin structure to comprise at least one upward step rising from the isolation region;
• forming a capping layer following a contour of the upward steps;
• performing an annealing process on the FinFET precursor to form at least two dislocations along the upward step;
• and
• removing the capping layer.

A method of manufacturing a semiconductor device comprising:

• receiving a FinFET precursor comprising:
• a fin structure formed between isolation regions;
• and
• a gate structure formed over a portion of the fin structure such that a sidewall of the fin structure is in contact with a gate spacer of the gate structure;
• patterning the fin structure to comprise at least one upward step rising from the isolation region;
• forming a capping layer over the fin structure, the isolation region, and the gate structure, wherein the capping layer has a plurality of sub layers;
• performing an annealing process on the FinFET precursor to form at least two dislocations along the upward step;
• and
• removing the capping layer.