Dual gate fd-soi transistor
AssigneeSTMicroelectronics International N.V.
InventorsAnand KUMAR, Ankit AGRAWAL
Life of this patent
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Abstract
Circuit module designs that incorporate dual gate field effect transistors are implemented with fully depleted silicon-on-insulator (FD-SOI) technology. Lowering the threshold voltages of the transistors can be accomplished through dynamic secondary gate control in which a back-biasing technique is used to operate the dual gate FD-SOI transistors with enhanced switching performance. Consequently, such transistors can operate at very low core voltage supply levels, down to as low as about 0.4 V, which allows the transistors to respond quickly and to switch at higher speeds. Performance improvements are shown in circuit simulations of an inverter, an amplifier, a level shifter, and a voltage detection circuit module.
Claims22
A pass gate formed on a silicon substrate, the pass gate comprising a fully-depleted silicon-on-insulator (FD-SOI) dual gate transistor configured with a source terminal, a drain terminal, a primary gate, and a secondary gate oriented in a direction transverse to the primary gate.
A pass gate formed on a silicon substrate, the pass gate comprising a fully-depleted silicon-on-insulator (FD-SOI) dual gate transistor configured with a source terminal, a drain terminal, a primary gate, and a secondary gate, the primary and secondary gates being coupled together and accessible from a front side of the silicon substrate.
A method, comprising:
- forming a primary gate in an active layer of a silicon-on-insulator (SOI) substrate having a buried oxide layer therein, the primary gate including a gate electrode and a gate oxide;
- implanting source and drain regions with dopant ions using the primary gate as a mask, the source and drain regions defining a channel therebetween;
- forming a front side contact to an N-doped region for use of the N-doped region as a secondary gate;
- and
- forming an electrical connection between the primary gate and the secondary gate.
Dependencies are inferred from the claim text.