Semiconductor Devices Including Channel Regions with Varying Widths
AssigneeSamsung Electronics Co., Ltd.
InventorYaoqi Dong
Life of this patent
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Abstract
A semiconductor device includes a semiconductor substrate, a fin-type structure on the semiconductor substrate, and a gate on a portion of a top surface and portions of two side surfaces of the fin-type structure. The gate has a first width at a first level from the top surface of the substrate and a second width at a second level from the top surface of the substrate that is lower than the first level. The first width is greater than the second width, and a width of the gate is reduced from the first width to the second width between the first level and the second level.
Claims20
A semiconductor device comprising:
- a semiconductor substrate having an upper surface;
- a fin-type structure on the semiconductor substrate, the fin-type structure having a top surface opposite the substrate and two opposing side surfaces;
- and
- a gate on a portion of the top surface and portions of the two side surfaces of the fin-type structure;
- wherein the gate has a first width at a first level from the upper surface of the substrate and a second width at a second level from the upper surface of the substrate,
- wherein the second level is lower than the first level,
- wherein the first width is greater than the second width, and
- wherein a width of the gate is reduced from the first width to the second width between the first level and the second level.
A semiconductor device comprising:
- a semiconductor substrate;
- a fin-type structure on the semiconductor substrate;
- an insulating layer formed on the semiconductor substrate to have a top surface that is at lower level than a top surface of the fin-type structure;
- and
- a gate on a portion of a top surface of the fin-type structure and portions of side surfaces of the fin-type structure,
- wherein a width of the gate is reduced from a first width at an upper portion of the fin-type structure to a second width at a lower portion of the fin-type structure.
A semiconductor device, comprising:
- a semiconductor substrate having an upper surface;
- a fin on the semiconductor substrate, the fin having an upper portion distal from the substrate and a lower portion proximate the substrate, and including a source region and a drain region in opposite ends of the fin and a channel region between the source region and the drain region;
- a gate on the channel region and extending down a side of the fin from a top of the fin towards a bottom of the fin between the source region and the drain region;
- a source contact on an upper surface of the fin in the source region;
- and
- a drain contact on an upper surface of the fin in the drain region,
- wherein the gate has a first width at the upper portion of the fin and a second width at the lower portion of the fin, the first width being greater than the second width.
Dependencies are inferred from the claim text.