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US 2016/0111530 A1Published application
Structure of a Trench MOS Rectifier and Method of Forming the Same
AssigneeQinhai Jin
InventorQINHAI Jin
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Abstract
A structure of trench MOS rectifier and a method of forming the same are disclosed including a plurality of trenches formed in the n− drift epitaxial layer, a plurality of MOS structure formed on the substrate either in discrete islands or in rows. Asides the MOS gates there are source regions formed under the mesas. A top metal served as an anode is then formed on the resulted front surface connecting the MOS gates and the adjacent source regions.
Claims3
A trench rectifier device, comprising:
- an n type lightly doped epitaxial layer on a heavily doped n type semiconductor substrate having a plurality of trenches formed in parallel therein, said trenches spaced each from another by a mesa and said trenches each having a trench oxide layer formed a bottom and sidewalls thereon;
- a first conductive poly-Si layer filled said trenches;
- each said mesa having a plurality of MOS gates formed thereon and a plurality of source regions formed therein, in a way that said MOS gates each interposed along a longitudinal direction of said mesa between said source regions, furthermore, each said MOS gate having stack layers of a second conductive poly-Si layer formed on a planar gate oxide layer;
- and
- a top metal layer formed over said MOS gates and said source regions to connect them together;
- and
- a rear metal layer as a cathode formed on a rear surface of said heavily doped n type semiconductor substrate. (FIG. 8A-8C)
4 more elements
Dependencies are inferred from the claim text.